Ergebnisse: 35
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Beschreibung Datenblatt Verfügbarkeit Preis (EUR) Ergebnisse in der Tabelle nach dem Einheitspreis bei Ihrer Menge filtern.
Menge RoHS ECAD Model Technologie
Montageart
Verpackung/Gehäuse
Transistorpolung
Anzahl der Kanäle
Vds - Drain-Source-Durchschlagspannung
Id - Drain-Gleichstrom
Rds On - Drain-Source-Widerstand
Vgs - Gate-Source-Spannung
Vgs th - Gate-Source-Schwellspannung
Qg - Gate-Ladung
Minimale Betriebstemperatur
Maximale Betriebstemperatur
Pd - Verlustleistung
Kanalmodus
Handelsname
Verpackung

Infineon Technologies MOSFETs HIGH POWER_LEGACY
Datenblatt
804Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms - 20 V, 20 V 3.5 V 44 nC - 55 C + 150 C 176 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 600V 10.6A DPAK-2
Datenblatt
7 256Auf Lager
Min.: 1
Mult.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 10.6 A 380 mOhms - 20 V, 20 V 3.5 V 19 nC - 55 C + 150 C 31 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFETs HIGH POWER_PRC/PRFRM
Datenblatt
693Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20.2 A 190 mOhms - 20 V, 20 V 3.5 V 37 nC - 55 C + 150 C 151 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER PRICE/PERFORM
Datenblatt
714Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37.9 A 89 mOhms - 20 V, 20 V 3.5 V 70 nC - 55 C + 150 C 278 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER PRICE/PERFORM
Datenblatt
3 841Auf Lager
Min.: 1
Mult.: 1
: 3 000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 22.4 A 162 mOhms - 20 V, 20 V 3.5 V 44 nC - 40 C + 150 C 176 W Enhancement CoolMOS Reel, Cut Tape

Infineon Technologies MOSFETs HIGH POWER_PRC/PRFRM
Datenblatt
509Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20.2 A 171 mOhms - 20 V, 20 V 3.5 V 37 nC - 55 C + 150 C 151 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_PRC/PRFRM
Datenblatt
430Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7.3 A 540 mOhms - 20 V, 20 V 3.5 V 12 nC - 55 C + 150 C 28 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER PRICE/PERFORM
Datenblatt
812Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30 A 113 mOhms - 20 V, 20 V 3.5 V 56 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_PRC/PRFRM
Datenblatt
330Auf Lager
500erwartet ab 04.02.2027
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20.2 A 190 Ohms - 20 V, 20 V 3.5 V 37 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_LEGACY
Datenblatt
1 971Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 7.3 A 600 mOhms - 20 V, 20 V 4 V 12 nC - 55 C + 150 C 63 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs N-Ch 600V 7.7A TO220FP-3
Datenblatt
529Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 13.8 A 252 mOhms - 20 V, 20 V 3.5 V 25.5 nC - 55 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_PRICE/PERFORM
Datenblatt
5 027Auf Lager
Min.: 1
Mult.: 1
: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 23.8 A 160 mOhms - 20 V, 20 V 4 V 44 nC - 55 C + 150 C 176 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFETs HIGH POWER PRICE/PERFORM
Datenblatt
854Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37.9 A 89 mOhms - 20 V, 20 V 3.5 V 70 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER PRICE/PERFORM
Datenblatt
469Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 77.5 A 37 mOhms - 20 V, 20 V 3.5 V 170 nC - 55 C + 150 C 481 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER PRICE/PERFORM
Datenblatt
923Auf Lager
240erwartet ab 07.01.2027
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 77.5 A 37 mOhms - 20 V, 20 V 3.5 V 170 nC - 55 C + 150 C 481 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER PRICE/PERFORM
Datenblatt
1 183Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 37.9 A 89 mOhms - 20 V, 20 V 3.5 V 70 nC - 55 C + 150 C 278 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER_LEGACY
Datenblatt
343Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms - 20 V, 20 V 3.5 V 44 nC - 55 C + 150 C 176 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER PRICE/PERFORM
Datenblatt
379Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37.9 A 89 mOhms - 20 V, 20 V 3.5 V 70 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 600V 10.4A TO220FP-3
Datenblatt
30Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms - 20 V, 20 V 3.5 V 44 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 600V 10.4A TO220FP-3
Datenblatt
8Auf Lager
1 000erwartet ab 24.09.2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms - 20 V, 20 V 3.5 V 44 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 600V 8.6A TO220FP-3
Datenblatt
457Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 16.8 A 538 mOhms - 20 V, 20 V 4 V 31 nC - 55 C + 150 C 33 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER PRICE/PERFORM
Datenblatt
496Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37.9 A 89 mOhms - 20 V, 20 V 3.5 V 70 nC - 55 C + 150 C 278 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER PRICE/PERFORM
Datenblatt
276Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30 A 113 mOhms - 20 V, 20 V 3.5 V 56 nC - 55 C + 150 C 219 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER PRICE/PERFORM
Datenblatt
181Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 53.5 A 63 mOhms - 20 V, 20 V 3.5 V 100 nC - 55 C + 150 C 391 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER PRICE/PERFORM
Datenblatt
330Auf Lager
240erwartet ab 11.02.2027
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 53.5 A 63 mOhms - 20 V, 20 V 3.5 V 100 nC - 55 C + 150 C 391 W Enhancement CoolMOS Tube