650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors

Infineon Technologies 650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors feature advanced technology, meeting the demand for efficient energy applications. The Infineon Technologies 650V transistors feature a cutting-edge micro-pattern trench design for precise control and high performance. The design results in significant loss reduction, improved efficiency, and enhanced power density across various industries like string inverters, energy storage systems (ESS), EV charging, industrial UPS, and welding.

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Qty. RoHS ECAD Model Technology
Package/Case
Mounting Style
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Infineon Technologies IGBTs 650 V, 150 A IGBT with anti-parallel diode in TO247PLUS-3 package
Datasheet
318In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 621 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 150 A IGBT with anti-parallel diode in TO247PLUS-4 package
Datasheet
318In Stock
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 621 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS 4pin package
Datasheet
417In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 40 A IGBT with anti-parallel diode in TO-247-3 HCC package
Datasheet
438In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 208 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 75 A IGBT with anti-parallel diode in TO-247PLUS-3pin package
Datasheet
268In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 75 A IGBT with anti-parallel diode in TO247PLUS 4pin package
Datasheet
188In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 40 A IGBT with anti-parallel diode in TO247-4 package
Datasheet
317In Stock
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 210 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 140 A IGBT with anti-parallel diode in TO-247PLUS-3pin package
Datasheet
450In Stock
2 160On Order
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 75 A IGBT with anti-parallel diode in TO-247 3pin package
Datasheet
402In Stock
480Expected 08/10/2026
Min.: 1
Mult.: 1

IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 140 A IGBT with anti-parallel diode in TO-247PLUS 4pin package
Datasheet
476In Stock
480Expected 19/11/2026
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 100 A IGBT with anti-parallel diode in TO-247PLUS 4pin package
Datasheet
680In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 120 A IGBT with anti-parallel diode in TO247PLUS-3 package
Datasheet
Lead-Time 40 Weeks
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 498 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 50 A IGBT with anti-parallel diode in TO-247 3pin package
Datasheet
237In Stock
240Expected 10/06/2027
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 50 A IGBT with anti-parallel diode in TO-247-3 HCC package
Datasheet
232In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 249 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO-247-3 HCC package
Datasheet
162In Stock
240Expected 12/11/2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 341 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 50 A IGBT with anti-parallel diode in TO247-4 package
Datasheet
97In Stock
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 250 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 120 A IGBT with anti-parallel diode in TO-247PLUS-3pin package
Datasheet
82In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 120 A IGBT with anti-parallel diode in TO-247PLUS 4pin package
Datasheet
149In Stock
240Expected 29/10/2026
Min.: 1
Mult.: 1

Si IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 40 A IGBT with anti-parallel diode in TO-247 4pin package
Datasheet
187In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS 3pin package
Datasheet
27In Stock
240Expected 15/10/2026
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 120 A IGBT with anti-parallel diode in TO247PLUS-4 package
Datasheet
5In Stock
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 498 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 50 A IGBT with anti-parallel diode in TO-247 4pin package
Datasheet
6In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 75 A IGBT with anti-parallel diode in TO-247 4pin package
Datasheet
26In Stock
480Expected 01/10/2026
Min.: 1
Mult.: 1

IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 100 A IGBT with anti-parallel diode in TO-247PLUS-3pin package
Datasheet
460Expected 05/11/2026
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 40 A IGBT with anti-parallel diode in TO-247 3pin package
Datasheet
240Expected 22/07/2027
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube