Ergebnisse: 47
Auswählen Bild Teile-Nr.
 Herst.
Beschreibung Datenblatt Verfügbarkeit Preis (EUR) Ergebnisse in der Tabelle nach dem Einheitspreis bei Ihrer Menge filtern.
Menge RoHS ECAD Model Technologie
Montageart
Verpackung/Gehäuse
Transistorpolung
Anzahl der Kanäle
Vds - Drain-Source-Durchschlagspannung
Id - Drain-Gleichstrom
Rds On - Drain-Source-Widerstand
Vgs - Gate-Source-Spannung
Vgs th - Gate-Source-Schwellspannung
Qg - Gate-Ladung
Minimale Betriebstemperatur
Maximale Betriebstemperatur
Pd - Verlustleistung
Kanalmodus
Handelsname
Verpackung
Infineon Technologies MOSFETs HIGH POWER_NEW
Datenblatt
1 578Auf Lager
Min.: 1
Mult.: 1
: 3 000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 33 A 66 mOhms 20 V 3.5 V 67 nC - 40 C + 150 C 189 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFETs HIGH POWER_NEW
Datenblatt
3 690Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 3 000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 40 A 60 mOhms 20 V 3.5 V 79 nC - 40 C + 150 C 219 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs HIGH POWER_NEW
Datenblatt
2 896Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 3 000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 16 A 160 mOhms 20 V 3.5 V 31 nC - 40 C + 150 C 95 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs HIGH POWER_NEW
Datenblatt
1 332Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 2 000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 24 A 105 mOhms 20 V 4 V 36 nC - 55 C + 150 C 140 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs HIGH POWER_NEW
Datenblatt
2 989Auf Lager
Min.: 1
Mult.: 1
: 3 000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 25 A 95 mOhms 20 V 3.5 V 51 nC - 40 C + 150 C 147 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs HIGH POWER_NEW
Datenblatt
1 658Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 14 A 144 mOhms 20 V 3.5 V 28 nC - 55 C + 150 C 75 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datenblatt
1 980Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 2 000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 33 A 75 mOhms 20 V 4 V 51 nC - 55 C + 150 C 188 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs HIGH POWER_NEW
Datenblatt
3 361Auf Lager
Min.: 1
Mult.: 1
: 3 000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 14 A 153 mOhms 20 V 3.5 V 28 nC - 40 C + 150 C 85 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFETs HIGH POWER_NEW
Datenblatt
2 492Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 2 000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 600 V 44 A 55 mOhms 20 V 4 V 67 nC - 55 C + 150 C 236 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs HIGH POWER_NEW
Datenblatt
688Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11 A 125 mOhms 20 V 3.5 V 36 nC - 55 C + 150 C 32 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER_NEW
Datenblatt
268Auf Lager
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 36 A 60 mOhms 10 V 3.5 V 68 nC - 55 C + 150 C 171 W Enhancement Tube
Infineon Technologies MOSFETs LOW POWER_NEW
Datenblatt
712Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9 A 237 mOhms 20 V 3.5 V 18 nC - 55 C + 150 C 52 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER_NEW
Datenblatt
136Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 69 A 29 mOhms 20 V 4.5 V 145 nC - 55 C + 150 C 305 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datenblatt
892Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 8 A 144 mOhms 20 V 3.5 V 28 nC - 55 C + 150 C 26 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datenblatt
816Auf Lager
Min.: 1
Mult.: 1
: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 31 A 70 mOhms 20 V 4.5 V 67 nC - 55 C + 150 C 156 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs HIGH POWER_NEW
Datenblatt
300Auf Lager
Min.: 1
Mult.: 1

Si Through Hole N-Channel 1 Channel 650 V 50 A 41 mOhms 20 V 4.5 V 102 nC - 55 C + 150 C 227 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datenblatt
5 134Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 50 A 40 mOhms 20 V 4 V 107 nC - 55 C + 150 C 227 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs HIGH POWER_NEW
Datenblatt
3 163Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 16 A 145 mOhms 20 V 3.5 V 31 nC - 55 C + 150 C 83 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFETs HIGH POWER_NEW
Datenblatt
421Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38 A 55 mOhms 20 V 3.5 V 79 nC - 55 C + 150 C 178 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datenblatt
1 405Auf Lager
Min.: 1
Mult.: 1
: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 21 A 105 mOhms 20 V 4.5 V 42 nC - 55 C + 150 C 106 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs HIGH POWER_NEW
Datenblatt
2 425Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 14 A 144 mOhms 20 V 3.5 V 28 nC - 55 C + 150 C 76 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs HIGH POWER_NEW
Datenblatt
800Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 31 A 57 mOhms 20 V 3.5 V 67 nC - 55 C + 150 C 156 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datenblatt
642Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 90 mOhms 20 V 3.5 V 51 nC - 55 C + 150 C 125 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datenblatt
577Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 2 000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 600 V 52 A 45 mOhms 20 V 4 V 79 nC - 55 C + 150 C 270 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFETs HIGH POWER_NEW
Datenblatt
180Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 101 A 18 mOhms 20 V 3.5 V 251 nC - 55 C + 150 C 416 W Enhancement Tube