Wolfspeed Silicon Carbide (SiC) Schottky Diodes

Wolfspeed Silicon Carbide (SiC) Schottky Diodes are optimized for high-performance power electronics applications, including server power supplies, electric vehicle charging systems, energy storage systems, solar (PV) inverters, industrial power supplies, and consumer electronics. Compared to silicon-based solutions, Wolfspeed Silicon Carbide technology enables increased system power density, higher switching frequencies, smaller designs, cooler components, reduced size of components like inductors, capacitors, filters, and transformers, and overall cost benefits. Wolfspeed SiC diodes feature the MPS (Merged PiN Schottky) design, which is more robust and reliable than standard Schottky barrier diodes. Wolfspeed's portfolio of SiC Schottky diodes come in various packages to meet diverse application requirements.

Features

  • 1700V, 1200V, 650V, or 600V Schottky rectifiers
  • Zero reverse-recovery charge for fast-switching operations
  • Robust MPS technology
  • Temperature-independent switching behavior
  • High-frequency operation
  • Extremely fast switching
  • Improves system efficiency with lower conduction losses
  • Essentially no switching losses
  • Reduce heat sink requirements
  • Parallel devices without thermal runaway
  • Reduce system size, weight, and cooling requirements
  • Low VF
    • (+25°C) = 1.27V
    • (+175°C) = 1.5V
  • Low Figure of Merit (QC x VF)
  • Wide -55°C to +175°C operating temperature range (Tj)
  • Portfolio contains multiple package types including, QFN 8mm x 8mm, TO-220-2, TO-220-2 isolated, TO-220-F2 full, TO-247-2, TO-247-3, TO-252-2, and TO-263-2

Applications

  • Servers and telecom
  • Battery management systems (BMS)
  • Energy Storage Systems (ESS)
  • Switch mode power supplies
  • Power factor correction
  • Motor drivers
  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)
  • Industrial power supplies
  • HVAC
  • Consumer electronics

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Veröffentlichungsdatum: 2011-07-21 | Aktualisiert: 2024-10-08