STMicroelectronics STPSC Schottky Silicon-Carbide Diodes
STMicroelectronics Schottky Silicon-Carbide Diodes take advantage of SiC's superior physical characteristics over standard silicon, with four times better dynamic characteristics and 15% less forward voltage (VF). The low reverse recovery characteristics make ST's silicon-carbide diodes a key contributor to energy savings in SMPS applications and in emerging domains such as solar energy conversion, EV or HEV charging stations. They are also ideal for other applications such as welding equipment and air conditioners. STMicroelectronics SiC product portfolio includes a 20A, 600V diode, housed in a halogen-free TO-247 package, to extend its 4A to 12A, through-hole, and SMD package offer. The second generation, with a 6A, 1200V device, and a 650V series are also available.
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STMicroelectronics 600V Power Schottky Silicon Carbide Diode
Ultrahigh performance power schottky diode manufactured using a silicon carbide substrate.
STMicroelectronics STPSC 650-V-Schottky-Dioden auf Siliziumkarbid-Basis
Extrem leistungsstarke Schottky-Diode.
STMicroelectronics STPSC 1.200-V-Schottky-Diode auf Siliziumkarbid-Basis
Hochleistungsgleichrichter, die speziell für den Einsatz in Photovoltaik-Wechselrichtern ausgelegt sind.
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STMicroelectronics Standardprodukte
Eine große Auswahl von Drop-in-Ersatzteilen für Universal-Analog-ICs, diskrete und serielle EEPROMs.