Vishay / Siliconix SIA436DJ N-Channel 8V TrenchFET® MOSFET

Vishay / Siliconix SIA436DJ N-Channel 8V TrenchFET® MOSFET is offered in a compact PowerPAK SC-70 package to save PCB space in portable electronics. This MOSFET comes with on-resistance values that are 18% lower than previous generation solutions and up to 64% lower than the closest competing N-channel device in a 2mm x 2mm footprint area. This ultra-low on-resistance translates into lower conduction losses for reduced power consumption, in addition to a lower voltage drop across the load switch to prevent an unwanted undervoltage lockout. Vishay / Siliconix SiA436DJ on-resistance ratings are down to 1.2V, which simplifies circuit design by allowing the MOSFET to work with the low voltage power rails common in handheld devices, providing longer battery operation between charges.

Features

  • Halogen free, according to IEC 61249-2-21 definition
  • Compact package
  • Ultra-low RDS(on)
  • TrenchFET power MOSFET
  • Thermally enhanced PowerPAK® SC-70 package
  • 100% Rg tested
  • Compliant to RoHS Directive 2002/95/EC

Applications

  • Load switches for portable applications such as smartphones, tablet PCs, and mobile computing
  • Low voltage gate drives
  • Low voltage drop
  • Power switch for ICs
Veröffentlichungsdatum: 2012-07-03 | Aktualisiert: 2022-03-11