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SemiQ GCMX 1200V SiC MOSFET Full-Bridge Modules

SemiQ GCMX 1200V SiC MOSFET Full-Bridge Modules offer low switching losses, low junction-to-case thermal resistance, and very rugged and easy mounting. These modules directly mount the heatsink (isolated package) and include a Kelvin reference for stable operation. All parts have been rigorously tested to withstand voltages above 1350V. The hallmark characteristic of these modules is the robust 1200V drain-source voltage. The GCMX full-bridge modules operate at a 175°C junction temperature and are RoHS-compliant. Typical applications include photovoltaic inverters, battery chargers, energy storage systems, and high-voltage DC-to-DC converters.

Features

  • High-speed switching SiC MOSFETs
  • Reliable body diode
  • All parts tested to above 1350V
  • Direct mounting to the heatsink (isolated package)
  • 175°C junction temperature
  • Kelvin reference for stable operation
  • Low switching losses
  • Low junction to case thermal resistance
  • Very rugged and easy mounting
  • RoHS-compliant

Applications

  • Photovoltaic inverter
  • Battery charger
  • Energy storage system
  • High voltage DC-to-DC converter

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View Results ( 9 ) Page
Teilnummer Datenblatt Transistorpolung Abfallzeit Id - Drain-Gleichstrom Pd - Verlustleistung Rds On - Drain-Source-Widerstand Anstiegszeit Regelabschaltverzögerungszeit Typische Einschaltverzögerungszeit Vds - Drain-Source-Durchschlagspannung Vgs th - Gate-Source-Schwellspannung
GCMX040A120B3H1P GCMX040A120B3H1P Datenblatt N-Channel 12 ns 53 A 208 W 38 mOhms 6 ns 25 ns 16 ns 1.2 kV 1.8 V
GCMX080A120B2H1P GCMX080A120B2H1P Datenblatt N-Channel 4 ns 27 A 119 W 77 mOhms 3 ns 18 ns 10 ns 1.2 kV 1.8 V
GCMX010A120B3H1P GCMX010A120B3H1P Datenblatt N-Channel 15 ns 201 A 600 W 8.9 mOhms 9 ns 50 ns 32 ns 1.2 kV 4 V
GCMX020A120B2H1P GCMX020A120B2H1P Datenblatt N-Channel 16 ns 102 A 333 W 18 mOhms 6 ns 44 ns 23 ns 1.2 kV 1.8 V
GCMX020A120B2H2P GCMX020A120B2H2P Datenblatt N-Channel 16 ns 102 A 333 W 28 mOhms 8 ns 48 ns 25 ns 1.2 kV 4 V
GCMX020A120B3H1P GCMX020A120B3H1P Datenblatt N-Channel 18 ns 93 A 300 W 18.1 mOhms 10 ns 46 ns 26 ns 1.2 kV 1.8 V
GCMX040A120B2H1P GCMX040A120B2H1P Datenblatt N-Channel 13 ns 56 A 217 W 38 mOhms 5 ns 26 ns 16 ns 1.2 kV 1.8 V
GCMX040A120B2H2P GCMX040A120B2H2P Datenblatt N-Channel 11 ns 56 A 217 W 52 mOhms 7 ns 29 ns 16 ns 1.2 kV 4 V
GCMX080A120B2H2P GCMX080A120B2H2P Datenblatt N-Channel 12 ns 27 A 119 W 100 mOhms 5 ns 22 ns 11 ns 1.2 kV 4 V
Veröffentlichungsdatum: 2024-03-01 | Aktualisiert: 2025-05-27