Qorvo GaN Switches

Qorvo Gallium Nitride (GaN) Switches are suited for RF Switching applications and feature high breakdown voltages combined with the low on-resistance and off-state capacitance. This enables a dramatic increases in power handling. GaAs FET switches are widely used in the RF industry, and typically used for power levels on the order of a few watts or less. GaN FETs are able to use the same circuit architectures to handle power levels on the order of tens of watts.

Features

  • Wideband frequency coverage
  • Low insertion loss with high linearity
  • Large selection with reflective and absorptive SPST and SPnT
  • Small footprint, low profile packaging available
  • Reduced part count
  • High operating voltage for improved system power efficiency

Applications

  • Mobile products
  • Wireless infrastructure
  • Wi-Fi®
  • Automotive
  • Cable TV (CATV)
  • Defense and aerospace

GaN-on-SiC Advantage

Qorvo GaN Switches
Veröffentlichungsdatum: 2012-02-15 | Aktualisiert: 2022-07-14