Navitas Semiconductor NV614xC 700V GaNSlim™ Power ICs
Navitas Semiconductor NV614xC 700V GaNSlim™ Power ICs include a high-performance eMode GaN FET (330mΩ), an integrated gate drive, and extended features to create a faster, smaller, more efficient, and more robust integrated powertrain. Integrated lossless current sensing eliminates external current sensing resistors and increases system efficiency. Over-temperature protection increases system robustness, and auto standby and sleep modes increase light/tiny/no-load efficiency.
The highest dV/dt immunity, high-speed integrated drive, and industry-standard low-profile, low-inductance DPAK package enable designers to exploit Navitas GaN technology with simple, quick, reliable solutions, achieving breakthrough power density and efficiency. Navitas’ GaNSlim power ICs extend the capabilities of traditional topologies and enable the commercial introduction of breakthrough designs.
Features
- Integrated gate drive
- 3.3V/5V/15V PWM logic input compatible
- Programmable accurate GaN current sensing
- Over-temperature protection
- Wide VCC range (6.2V to 24V typical)
- Low standby current (50uA typical)
- Sleep mode current (10uA max)
- Built-in turn-on dV/dt optimization
- Built-in turn-off di/dt optimization
- Reliable hard and soft switching
- Zero reverse recovery charge
- DPAK-4L package with grounded cooling pad
- Grounded cooling pad
- Minimized package inductance
- Low thermal resistance
- Sustainability
- RoHS, Pb-free, REACH-compliant
- Up to 40% energy savings vs Si solutions
- System level 4kg CO2 carbon footprint reduction
- Product reliability of 20 years with a limited product warranty
Applications
- AC-DC charger and adapter
- Wireless power
- LED lighting
- Solar micro-inverters
- TV power
- Server power and telecom power
Block Diagram
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Veröffentlichungsdatum: 2024-11-22
| Aktualisiert: 2025-04-10