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IXYS PolarP3™ HiPerFET™ Power MOSFETs

IXYS PolarP3™ HiPerFET™ Power MOSFETs are the latest addition to the benchmark high-performance Polar-Series for the product portfolio between 300V, 500V, and 600V. The high Figure of Merit (FOM), which is the multiplication of Qg and RDS(on), provides an excellent alternative to weaker super junction technologies. These PolarP3 HiPerFETs demonstrate up to a 12% reduction in on-state resistance (Rdson), a 14 percent reduction in gate charge (Qg) and as high as a 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing the total power density of the device.

Features

  • Ultra-low on-resistance RDS(ON) and gate charge Qg
  • Fast body diode
  • dv/dt ruggedness
  • Avalanche rated
  • Low package inductance
  • International standard packages
  • Higher efficiency
  • High power density
  • Easy to mount
  • Space savings

Applications

  • Industrial switched-mode and resonant mode power supplies
  • Electric vehicle battery chargers
  • AC and DC motor drives
  • DC-DC converters
  • Renewable-energy inverters
  • Power Factor Correction (PFC) circuits
  • Robotics and servo control

Associated Product

IXYS HiPerFET™ Power MOSFETs

High-current HiPerFET™ power MOSFETs for hard switching & resonant mode applications.

Learn Moreüber IXYS HiPerFET™ Power MOSFETs View Productsverwandt mit IXYS HiPerFET™ Power MOSFETs
Veröffentlichungsdatum: 2011-10-14 | Aktualisiert: 2022-03-11