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Comchip Technology A2N7002H-HF N-Channel MOSFET

Comchip Technology A2N7002H-HF N-Channel MOSFET features low ON-resistance, high-speed switching, and ESD protection up to 2KV HBM. This device has a drain-source voltage (VDSS) rating of 60V, a gate-source voltage (VGSS) of ±20V, and a continuous drain current (ID) of 300mA. The Comchip Technology A2N7002H-HF MOSFET is offered in a compact SOT-23 package and is AEC-Q101 qualified for use in automotive applications.

Features

  • AEC-Q101 qualified
  • Low ON-resistance
  • ESD-protected gate up to 2KV HBM
  • High-speed switching
  • Enables simple drive circuits
  • Easy parallel use
  • -55°C to +150°C operating temperature range
  • SOT-23 molded plastic case
  • UL flammability classification rating 94V-0
  • Matte tin-plated terminal leads
  • Solderable per MIL-STD-202, method 208
  • RoHS-compliant and halogen-free

Applications

  • Automotive
  • DC-DC converters
  • Power management functions
  • Battery operated systems

Circuit Diagram & Package Outline

Comchip Technology A2N7002H-HF N-Channel MOSFET
Veröffentlichungsdatum: 2020-07-21 | Aktualisiert: 2024-05-16