Ampleon CLP24H4S30P GaN-SiC HEMT Power Transistor
Ampleon CLP24H4S30P GaN-SiC HEMT Power Transistor is a high-efficiency 30W device designed for continuous wave (CW) applications within the 2400MHz to 2500MHz frequency range. Engineered for use in industrial, scientific, medical, and consumer cooking systems, the Ampleon CLP24H4S30P offers excellent power performance and thermal stability. The device features an internally input-matched design and supports broadband operation, minimizing the need for complex external matching circuits. Housed in a compact 7mm x 7mm DFN surface-mount package, the CLP24H4S30P is ideal for compact, high-power RF amplifier designs.
Features
- Optimized with Continuous Wave (CW) power
- High efficiency
- Ultra-small external matching circuit
- Designed for broadband operation (2400MHz to 2500MHz)
- Internally input matched
- High-performance DFN package
Applications
- Commercial and consumer cooking
- Industrial
- Scientific
- Medical
Specifications
- 52V maximum operating supply voltage
- 150V maximum drain-source voltage
- Thermal resistance by Finite Element Analysis
- 6.2K/W typical from active die channel to top of package
- 5.7K/W typical from active die channel to case
- RF characteristics
- 18.4dB typical power gain
- -8dB typical input return loss
- 61% typical drain efficiency
- -15V to +2V amplifier gate-source voltage range
- 3.2mA maximum amplifier forward gate current
- +225°C maximum active die channel temperature
- DC characteristics
- -3.5V to -2.2V gate-source threshold voltage range
- -3.05V to -2.05V gate-source quiescent voltage range
- 0.774mA maximum drain leakage current
- 0.155mA maximum gate leakage current
- 2.68A typical drain cut-off current
Veröffentlichungsdatum: 2025-05-07
| Aktualisiert: 2025-11-11