CoolGaN™ Gen 2 650V Power Transistors

Infineon Technologies CoolGaN™ Gen 2 650V Power Transistors feature highly efficient GaN (gallium nitride) transistor technology for power conversion in a voltage range up to 650V. Infineon’s GaN technology brings the e‑mode concept to maturity with high volumes of end-to-end production. This pioneering quality ensures the highest standards and offers the most reliable performance. The enhancement mode CoolGaN™ Gen 2 650V power transistors improve system efficiency and power density with ultra-fast switching.

Results: 12
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Technology
Infineon Technologies GaN FETs HV GAN DISCRETES 4 511In Stock
Cut Tape
€ 3,35
€ 1,70
€ 1,54
€ 1,26
€ 1,21
Reel
€ 1,07
Min.: 1
Mult.: 1
: 5 000
SMD/SMT HEMT 1 Channel 650 V 13 A 170 mOhms - 10 V 1.6 V 2.6 nC - 55 C + 150 C 46 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4 815In Stock
Cut Tape
€ 2,47
€ 1,22
€ 1,10
€ 0,886
Reel
€ 0,703
Min.: 1
Mult.: 1
: 5 000
SMD/SMT HEMT 1 Channel 650 V 9.2 A 240 mOhms - 10 V 1.6 V 1.8 nC - 55 C + 150 C 33 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4 699In Stock
Cut Tape
€ 2,15
€ 1,05
€ 0,894
€ 0,746
Reel
€ 0,586
Min.: 1
Mult.: 1
: 5 000
SMD/SMT HEMT 1 Channel 650 V 7.2 A 330 mOhms - 10 V 1.6 V 1.4 nC - 55 C + 150 C 28 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1 547In Stock
1 800Expected 17/12/2026
Cut Tape
€ 9,20
€ 5,11
€ 4,85
€ 4,12
Reel
€ 4,12
Min.: 1
Mult.: 1
: 1 800
SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 798In Stock
1 800Expected 07/12/2026
Cut Tape
€ 6,80
€ 4,01
€ 3,68
€ 3,59
€ 3,07
Reel
€ 3,07
Min.: 1
Mult.: 1
: 1 800
SMD/SMT HEMT 1 Channel 650 V 38 A 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 125 W GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1 163In Stock
Cut Tape
€ 4,29
€ 2,51
€ 2,10
€ 1,76
€ 1,63
Reel
€ 1,38
Min.: 1
Mult.: 1
: 1 800
SMD/SMT HEMT 1 Channel 650 V 15 A 140 mOhms - 10 V 1.6 V 3.4 nC - 40 C + 150 C Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 554In Stock
800Expected 07/12/2026
Cut Tape
€ 11,54
€ 7,69
€ 7,12
€ 6,17
Reel
€ 5,38
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 61 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 181 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 453In Stock
800Expected 30/11/2026
Cut Tape
€ 9,49
€ 5,28
€ 5,04
€ 4,28
Reel
€ 4,28
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C 132 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1 228In Stock
Cut Tape
€ 7,59
€ 4,14
€ 3,71
Reel
€ 3,28
€ 3,20
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 104 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 573In Stock
Cut Tape
€ 6,34
€ 3,40
€ 3,11
€ 2,51
Reel
€ 2,51
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 83 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES
23 329On Order
Cut Tape
€ 10,97
€ 6,20
€ 6,11
€ 5,19
Reel
€ 5,19
Min.: 1
Mult.: 1
: 1 800
SMD/SMT HEMT 1 Channel 650 V 67 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 219 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES
5 400On Order
Cut Tape
€ 6,29
€ 3,48
€ 3,19
€ 3,01
€ 2,42
Reel
€ 2,42
Min.: 1
Mult.: 1
: 1 800
SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 104 W Enhancement GaN