FDT4N50NZU

Name: onsemi FDT4N50NZU
Brand: onsemi
SKU: 863-FDT4N50NZU
Price: 1.87 EUR
Availability: InStock

Mouser No:

863-FDT4N50NZU

Mfr. No:

FDT4N50NZU

Mfr.:

onsemi

Description:

MOSFETs UNIFET II 3OHM SOT223

Datasheet:

FDT4N50NZU Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi FDT4N50NZU

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Id - Continuous Drain Current:	2 A
Rds On - Drain-Source Resistance:	3 Ohms
Vgs - Gate-Source Voltage:	25 V
Vgs th - Gate-Source Threshold Voltage:	5.5 V
Qg - Gate Charge:	9.1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Product Type:	MOSFETs
Series:	FDT4N50NZU
Factory Pack Quantity:	4000
Subcategory:	Transistors

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

FDT4N50NZU Datasheet (PDF)

PCN

Material Composition Disclosure

Compliance Codes

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Czech Republic

The country is subject to change at the time of shipment.

FDT4N50NZU UniFET II MOSFET

onsemi FDT4N50NZU UniFET II MOSFET is a high voltage MOSFET based on advanced planar stripe and DMOS technology. The MOSFET has a small on-state resistance among the planar MOSFET. It provides superior switching performance and higher avalanche energy strength. An internal gate-source ESD diode allows the UniFET II MOSFET to withstand over 2kV HBM surge stress.

FEATURED PRODUCTS

ONSEMI

NVMTS1D1N08X N‐Channel Power MOSFETs

80V automotive MOSFETs with low on-resistance and soft-recovery body diode.

Learn More

80V Single N-Channel Power MOSFETs

Offer low R_DS(on) to minimize conduction losses & low QG and capacitance to minimize driver losses.

Learn More

NVNJWS1K6N061L N-Channel MOSFET

Features low R_DS(on) and low gate threshold with integrated ESD protection.

Learn More

NVBYST0D8N08X Single N-Channel Power MOSFET

Optimized for high‑voltage operation and withstands fast switching and high-current stresses.

Learn More

NTMFD0D9N02P1E MOSFET

Dual N-channel MOSFET designed with low R_g for fast switching applications.

Learn More

In Stock: 7 858

Stock:: 7 858 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1 Maximum: 4000

Unit Price:

€ -,--

Ext. Price:

€ -,--

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€ 1,87	€ 1,87
	€ 1,19	€ 11,90
	€ 0,804	€ 80,40
	€ 0,652	€ 326,00
	€ 0,584	€ 584,00
	€ 0,546	€ 1.092,00
Full Reel (Order in multiples of 4000)
	€ 0,519	€ 2.076,00

FDT4N50NZU

Mfr.: onsemi

Description: MOSFETs UNIFET II 3OHM SOT223

Specifications

Documents (4)

Datasheet

PCN

Environmental Documents

Product & Trade Compliance

More Information

FDT4N50NZU UniFET II MOSFET

Customers Also Purchased

FEATURED PRODUCTS ONSEMI

In Stock: 7 858

Pricing (EUR)

QuickView

An unexpected error has occurred.

Mfr.:

onsemi

Description:

MOSFETs UNIFET II 3OHM SOT223

FEATURED PRODUCTS

ONSEMI