- Auf 1 Gamma DRAM-Knoten basierender DDR5-Speicher der 6. Generation (10 nm-Klasse), der für CPUs der nächsten Generation entwickelt wurde.

- High-speed dynamic random-access memory is internally organized with eight banks or sixteen banks.

- Support data rates up to 4266Mb/s and maintain backward compatibility with lower speeds.

- Hochgeschwindigkeits-Verbindungsschnittstellen nach Industriestandard für die Kommunikation zwischen IO-Geräten.

- Designed to meet the extended automotive operating temperature range of -40°C to 105°C. 

- Designed to meet the extended automotive operating temperature range of -40°C to 105°C. 

- Features 3200Mbps data rate, bi-directional differential data strobe, and Data Mask to write data.

- Feature low power consumption and auto precharge option for each burst access.

- DRAMs feature a high-speed option with low power consumption.