DTMOSIV-H MOSFETs

Toshiba DTMOSIV-H MOSFETs are suited to applications that require high reliability, power efficiency, and a compact design, such as high-efficiency switching power supplies for servers and telecom base stations and as power conditioners for photovoltaic inverters. Toshiba DTMOSIV-H MOSFETs achieve a high-speed switching performance while keeping the low ON-resistance level of conventional DTMOSIV and without loss of power. This is accomplished by reducing parasitic capacitance between gate and drain, which also contributes to improved power efficiency and downsizing of products.

Ergebnisse: 19
Auswählen Bild Teile-Nr. Herst. Beschreibung Datenblatt Verfügbarkeit Preis (EUR) Ergebnisse in der Tabelle nach dem Einheitspreis bei Ihrer Menge filtern. Menge RoHS ECAD Model Technologie Montageart Verpackung/Gehäuse Transistorpolung Anzahl der Kanäle Vds - Drain-Source-Durchschlagspannung Id - Drain-Gleichstrom Rds On - Drain-Source-Widerstand Vgs - Gate-Source-Spannung Vgs th - Gate-Source-Schwellspannung Qg - Gate-Ladung Minimale Betriebstemperatur Maximale Betriebstemperatur Pd - Verlustleistung Kanalmodus Handelsname Verpackung
Toshiba MOSFETs Power MOSFET N-Channel 637Auf Lager
€ 5,42
€ 3,87
€ 2,86
€ 2,54
€ 2,27
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 120 mOhms 30 V 3 V 60 nC - 55 C + 150 C 45 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs DTMOSIV-High Speed 600V 88mVGS=10V) 4 891Auf Lager
Cut-Tape
€ 5,92
€ 3,15
€ 2,97
Reel
€ 2,97
Min.: 1
Mult.: 1
: 2 500
Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 30.8 A 78 mOhms 30 V 3.5 V 65 nC - 55 C + 150 C 240 W Enhancement DTMOSIV-H Reel, Cut Tape
Toshiba MOSFETs Power MOSFET N-Channel 88Auf Lager
€ 5,16
€ 2,67
€ 2,41
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 105 mOhms 30 V 2.5 V 40 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Tube

Toshiba MOSFETs DTMOSIV-H/S 600V 65mOhmmax(VGS=10V) 14Auf Lager
€ 9,53
€ 5,64
€ 5,48
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38.8 A 55 mOhms 30 V 3.5 V 85 nC - 55 C + 150 C 270 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs N-ch MOSFET, 600 V, 0.024 Ohm10V, TO-247, DTMOS6 36Auf Lager
€ 12,02
€ 9,43
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 80 A 24 mOhms 30 V 4 V 140 nC + 150 C 506 W Enhancement Tube
Toshiba MOSFETs TO-220SIS PD=45W 1MHz PWR MOSFET TRNS 97Auf Lager
€ 5,28
€ 2,76
€ 2,51
€ 2,09
€ 2,02
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 160 mOhms 30 V 4.5 V 50 nC - 55 C + 150 C 45 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs Power MOSFET N-Channel 51Auf Lager
€ 5,41
€ 3,54
€ 2,61
€ 2,31
€ 2,06
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 120 mOhms 30 V 3 V 60 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Tube

Toshiba MOSFETs Power MOSFET N-Channel 75Auf Lager
€ 5,13
€ 3,06
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 120 mOhms 30 V 3 V 60 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Tube

Toshiba MOSFETs Power MOSFET N-Channel 77Auf Lager
€ 4,94
€ 3,02
€ 2,30
€ 2,09
€ 1,98
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 105 mOhms 30 V 2.5 V 40 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs DTMOSIV-High Speed 600V 88m (VGS=10V) 48Auf Lager
€ 5,68
€ 3,72
€ 2,73
€ 2,43
€ 2,18
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms 30 V 3.5 V 65 nC - 55 C + 150 C 230 W Enhancement DTMOSIV-H Tube

Toshiba MOSFETs DTMOSIV-H/S 600V 88mOhmmax(VGS=10V) 69Auf Lager
€ 5,81
€ 3,62
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms 30 V 3.5 V 65 nC - 55 C + 150 C 230 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs TO-247-4L PD=230W 1MHz PWR MOSFET TRNS 46Auf Lager
€ 7,28
€ 3,96
€ 3,63
€ 3,37
Min.: 1
Mult.: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 30.8 A 88 mOhms 30 V 3.5 V 65 nC - 55 C + 150 C 230 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs DTMOSIV-High Speed 600V 40mOhmmax 60Auf Lager
€ 10,92
€ 9,06
€ 8,32
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 61.8 A 33 mOhms 30 V 3.5 V 135 nC - 55 C + 150 C 400 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs TO-247-4L PD=400W 1MHz PWR MOSFET TRNS 5Auf Lager
€ 13,79
€ 7,97
€ 7,77
Min.: 1
Mult.: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 61.8 A 40 mOhms 30 V 3.5 V 135 nC - 55 C + 150 C 400 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs Power MOSFET N-Channel
90erwartet ab 12.10.2026
€ 4,88
€ 2,55
€ 2,24
€ 1,97
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 105 mOhms 30 V 2.5 V 40 nC - 55 C + 150 C 45 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs TO-220SIS PD=45W 1MHz PWR MOSFET TRNS Nicht-auf-Lager-Vorlaufzeit 24 Wochen
€ 4,72
€ 2,47
€ 2,24
€ 1,89
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 150 mOhms 30 V 3.5 V 50 nC - 55 C + 150 C 45 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs POWER MOSFET TRANSISTOR DFN 8x8 PD=180W F=1MHZ Nicht-auf-Lager-Vorlaufzeit 16 Wochen
Reel
€ 1,91
Min.: 2 500
Mult.: 2 500
: 2 500
Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 650 V 22 A 170 mOhms 30 V 3 V 50 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Reel
Toshiba MOSFETs X33 Pb-F POWER MOSFET TRANSISTOR DTMOS DFN8x8-OS PD=180W F=1MHZ Nicht-auf-Lager-Vorlaufzeit 16 Wochen
Reel
€ 1,93
Min.: 2 500
Mult.: 2 500
: 2 500
Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 25 A 150 mOhms 30 V 3 V 60 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Reel
Toshiba MOSFETs 180W 1MHZ POWER MOSFET TRANSISTOR Nicht-auf-Lager-Vorlaufzeit 16 Wochen
Reel
€ 1,91
Min.: 2 500
Mult.: 2 500
: 2 500
Si SMD/SMT DFN8x8-5 DTMOSIV-H Reel