|
|
MOSFETs HIGH POWER_NEW
- IPDD60R080G7XTMA1
- Infineon Technologies
-
1:
€ 6,62
-
1 158Auf Lager
|
Mouser-Teilenr.
726-IPDD60R080G7XTM1
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
1 158Auf Lager
|
|
Min.: 1
Mult.: 1
:
1 700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
29 A
|
80 mOhms
|
20 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
174 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs HIGH POWER NEW
- IPT60R028G7XTMA1
- Infineon Technologies
-
1:
€ 16,47
-
1 395Auf Lager
-
2 000erwartet ab 28.01.2027
|
Mouser-Teilenr.
726-IPT60R028G7XTMA1
|
Infineon Technologies
|
MOSFETs HIGH POWER NEW
|
|
1 395Auf Lager
2 000erwartet ab 28.01.2027
|
|
Min.: 1
Mult.: 1
:
2 000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
75 A
|
28 mOhms
|
20 V
|
3 V
|
123 nC
|
- 55 C
|
+ 150 C
|
391 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs HIGH POWER NEW
- IPT60R102G7XTMA1
- Infineon Technologies
-
1:
€ 5,20
-
1 097Auf Lager
|
Mouser-Teilenr.
726-IPT60R102G7XTMA1
|
Infineon Technologies
|
MOSFETs HIGH POWER NEW
|
|
1 097Auf Lager
|
|
Min.: 1
Mult.: 1
:
2 000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
23 A
|
88 mOhms
|
20 V
|
3 V
|
34 nC
|
- 55 C
|
+ 150 C
|
141 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPDD60R125G7XTMA1
- Infineon Technologies
-
1:
€ 5,05
-
143Auf Lager
|
Mouser-Teilenr.
726-IPDD60R125G7XTM1
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
143Auf Lager
|
|
Min.: 1
Mult.: 1
:
1 700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
125 mOhms
|
20 V
|
3 V
|
27 nC
|
- 55 C
|
+ 150 C
|
120 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPT60R050G7XTMA1
- Infineon Technologies
-
1:
€ 9,79
-
14Auf Lager
-
2 000erwartet ab 29.04.2027
|
Mouser-Teilenr.
726-IPT60R050G7XTMA1
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
14Auf Lager
2 000erwartet ab 29.04.2027
|
|
Min.: 1
Mult.: 1
:
2 000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
44 A
|
50 mOhms
|
20 V
|
3 V
|
68 nC
|
- 55 C
|
+ 150 C
|
245 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPT60R080G7XTMA1
- Infineon Technologies
-
1:
€ 6,47
-
40Auf Lager
|
Mouser-Teilenr.
726-IPT60R080G7XTMA1
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
40Auf Lager
|
|
Min.: 1
Mult.: 1
:
2 000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
29 A
|
80 mOhms
|
30 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
167 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPDD60R150G7XTMA1
- Infineon Technologies
-
1:
€ 4,39
-
48Auf Lager
-
End-of-Life-Produkt
|
Mouser-Teilenr.
726-IPDD60R150G7XTM1
End-of-Life-Produkt
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
48Auf Lager
|
|
Min.: 1
Mult.: 1
:
1 700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
150 mOhms
|
20 V
|
3 V
|
23 nC
|
- 55 C
|
+ 150 C
|
95 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPDD60R050G7XTMA1
- Infineon Technologies
-
1:
€ 9,40
-
1 700erwartet ab 27.05.2027
|
Mouser-Teilenr.
726-IPDD60R050G7XTM1
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
1 700erwartet ab 27.05.2027
|
|
Min.: 1
Mult.: 1
:
1 700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
47 A
|
50 mOhms
|
20 V
|
3 V
|
68 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPDD60R190G7XTMA1
- Infineon Technologies
-
1:
€ 3,23
-
3 400erwartet ab 10.12.2026
|
Mouser-Teilenr.
726-IPDD60R190G7XTM1
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
3 400erwartet ab 10.12.2026
|
|
Min.: 1
Mult.: 1
:
1 700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
190 mOhms
|
20 V
|
3 V
|
18 nC
|
- 55 C
|
+ 150 C
|
76 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFETs HIGH POWER NEW
- IPT60R125G7XTMA1
- Infineon Technologies
-
2 000:
€ 1,70
-
Nicht-auf-Lager-Vorlaufzeit 53 Wochen
-
NRND
|
Mouser-Teilenr.
726-IPT60R125G7XTMA1
NRND
|
Infineon Technologies
|
MOSFETs HIGH POWER NEW
|
|
Nicht-auf-Lager-Vorlaufzeit 53 Wochen
|
|
Min.: 2 000
Mult.: 2 000
:
2 000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
108 mOhms
|
20 V
|
3 V
|
27 nC
|
- 55 C
|
+ 150 C
|
120 W
|
Enhancement
|
|
Reel
|
|