1200V Gen-3 Fast (G3F) SiC MOSFETs

GeneSiC Semiconductor 1200V Gen-3 Fast (G3F) SiC MOSFETs enable 22kW, 800V bi-directional on-board chargers for Electric Vehicles (EVs). These MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology, delivering high-speed performance. The 1200V SiC MOSFETs include 100%-tested avalanche capability, 30% longer short-circuit withstand time, and tight threshold voltage distributions for easy paralleling. These MOSFETs offer a low RDS(ON), superior power density, and cool-running performance. The 1200V SiC MOSFETs achieve up to 95.5% peak efficiency in EV charging and power conversion systems. These MOSFETs are ideal for applications, including EVs and DC-DC converters.

Ergebnisse: 15
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Menge RoHS ECAD Model Montageart
Verpackung/Gehäuse
Anzahl der Kanäle
Vds - Drain-Source-Durchschlagspannung
Id - Drain-Gleichstrom
Rds On - Drain-Source-Widerstand
Kanalmodus
GeneSiC Semiconductor SiC-MOSFETs 1200V 18mohm TO-263-7 G3F SiC MOSFET 753Auf Lager
Min.: 1
Mult.: 1
: 800

SMD/SMT TO-263-7 1 Channel 1.2 kV 18 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFETs 1200V 20mohm TO-263-7 G3F SiC MOSFET 894Auf Lager
Min.: 1
Mult.: 1
: 800

SMD/SMT TO-263-7 1 Channel 1.2 kV 123 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFETs 1200V 34mohm TO-263-7 G3F SiC MOSFET 1 546Auf Lager
Min.: 1
Mult.: 1
: 800

SMD/SMT TO-263-7 1 Channel 1.2 kV 34 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFETs 1200V 135mohm TO-263-7 G3F SiC MOSFET 1 485Auf Lager
Min.: 1
Mult.: 1
: 800

SMD/SMT TO-263-7 1 Channel 1.2 kV 135 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFETs 1200V 18mohm TO-247-4 G3F SiC MOSFET
Datenblatt
428Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 18 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFETs 1200V 20mohm TO-247-4 G3F SiC MOSFET 536Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 109 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFETs 1200V 25mohm TO-263-7 G3F SiC MOSFET 223Auf Lager
Min.: 1
Mult.: 1
: 800

SMD/SMT TO-263-7 1 Channel 1.2 kV 25 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFETs 1200V 25mohm TO-247-4 G3F SiC MOSFET 247Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 25 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFETs 1200V 34mohm TO-247-4 G3F SiC MOSFET 456Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 34 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFETs 1200V 40mohm TO-263-7 G3F SiC MOSFET 761Auf Lager
Min.: 1
Mult.: 1
: 800

SMD/SMT TO-263-7 1 Channel 1.2 kV 68 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFETs 1200V 40mohm TO-247-4 G3F SiC MOSFET 1 416Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 61 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFETs 1200V 65mohm TO-263-7 G3F SiC MOSFET
Datenblatt
1 550Auf Lager
Min.: 1
Mult.: 1
: 800

SMD/SMT TO-263-7 1 Channel 1.2 kV 65 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFETs 1200V 65mohm TO-247-4 G3F SiC MOSFET 473Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 65 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFETs 1200V 75mohm TO-263-7 G3F SiC MOSFET 562Auf Lager
Min.: 1
Mult.: 1
: 800

SMD/SMT TO-263-7 1 Channel 1.2 kV 39 A 75 mOhms Enhancement
GeneSiC Semiconductor SiC-MOSFETs 1200V 75mohm TO-247-4 G3F SiC MOSFET 1 685Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 35 A 75 mOhms Enhancement