LMG341xR150 GaN FET

Texas Instruments LMG341xR150 GaN FET with integrated driver and protection allows designers to achieve new power density levels and efficiency in power electronics systems. The LMG341xR150 GaN FET features ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. The features allow dense and efficient topologies like the totem pole PFC.