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SiC-MOSFETs SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
€ 18,77
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736Auf Lager
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NRND
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Mouser-Teilenr.
726-AIMW120R045M1XKS
NRND
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Infineon Technologies
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SiC-MOSFETs SIC_DISCRETE
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736Auf Lager
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€ 18,77
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€ 13,97
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€ 13,85
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-3
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N-Channel
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1 Channel
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1.2 kV
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52 A
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59 mOhms
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- 7 V, + 20 V
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5.7 V
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57 nC
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- 55 C
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+ 175 C
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228 W
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Enhancement
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CoolSiC
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SiC-MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
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1:
€ 4,59
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6 783Auf Lager
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4 000erwartet ab 07.01.2027
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Mouser-Teilenr.
726-IMBF170R1K0M1XTM
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Infineon Technologies
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SiC-MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
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6 783Auf Lager
4 000erwartet ab 07.01.2027
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€ 4,59
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€ 3,05
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€ 2,18
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€ 1,93
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€ 1,80
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Min.: 1
Mult.: 1
:
1 000
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SMD/SMT
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TO-263-7
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N-Channel
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1 Channel
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1.7 kV
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5.2 A
|
1 Ohms
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- 10 V, + 20 V
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4.5 V
|
5 nC
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- 55 C
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+ 175 C
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68 W
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Enhancement
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CoolSiC
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SiC-MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
€ 6,33
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285Auf Lager
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NRND
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Mouser-Teilenr.
726-IMW120R140M1HXKS
NRND
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
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285Auf Lager
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€ 6,33
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€ 4,02
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€ 3,37
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€ 3,12
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-3
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N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
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- 7 V, + 23 V
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3.5 V
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13 nC
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- 55 C
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+ 175 C
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94 W
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Enhancement
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CoolSiC
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SiC-MOSFETs SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
€ 13,00
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1 221Auf Lager
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NRND
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Mouser-Teilenr.
726-IMW65R027M1HXKSA
NRND
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Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
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1 221Auf Lager
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€ 13,00
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€ 8,18
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€ 7,37
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-3
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N-Channel
|
1 Channel
|
650 V
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47 A
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34 mOhms
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- 5 V, + 23 V
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5.7 V
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62 nC
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- 55 C
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+ 150 C
|
189 W
|
Enhancement
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CoolSiC
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SiC-MOSFETs SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
€ 9,46
-
42Auf Lager
-
240erwartet ab 24.08.2026
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NRND
|
Mouser-Teilenr.
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
42Auf Lager
240erwartet ab 24.08.2026
|
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€ 9,46
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€ 5,95
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€ 5,29
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€ 4,82
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Min.: 1
Mult.: 1
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Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
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+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
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SiC-MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
€ 13,83
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2 160Auf Bestellung
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NRND
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Mouser-Teilenr.
726-IMZ120R030M1HXKS
NRND
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
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2 160Auf Bestellung
Auf Bestellung:
720 erwartet ab 17.09.2026
Lieferzeit ab Hersteller:
52 Wochen
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€ 13,83
|
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€ 8,97
|
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€ 8,22
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Min.: 1
Mult.: 1
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Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
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SiC-MOSFETs SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
€ 7,82
-
Nicht-auf-Lager-Vorlaufzeit 52 Wochen
-
NRND
|
Mouser-Teilenr.
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
Nicht-auf-Lager-Vorlaufzeit 52 Wochen
|
|
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€ 7,82
|
|
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€ 4,57
|
|
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€ 3,85
|
|
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€ 3,66
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Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
Österreich