|
|
GaN FETs 18 V, 151 A enhancement-mode eGaN power transistor with 0.28 mOhm typ RDS(on).
EPC EPC2370
- EPC2370
- EPC
-
1:
€ 6,42
-
Non-Stocked
-
New Product
|
Mouser Part No
65-EPC2370-ES
New Product
|
EPC
|
GaN FETs 18 V, 151 A enhancement-mode eGaN power transistor with 0.28 mOhm typ RDS(on).
|
|
Non-Stocked
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
GaN FETs 25 V GaN power transistor, 88 A, 0.65 mOhm typ RDS(on), designed for synchronous rectification and POL buck converters.
EPC EPC2371
- EPC2371
- EPC
-
1:
€ 5,06
-
Non-Stocked
-
New Product
|
Mouser Part No
65-EPC2371-ES
New Product
|
EPC
|
GaN FETs 25 V GaN power transistor, 88 A, 0.65 mOhm typ RDS(on), designed for synchronous rectification and POL buck converters.
|
|
Non-Stocked
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
GaN FETs 25 V enhancement-mode eGaN power transistor for high-frequency DC-DC conversion and synchronous rectification.
EPC EPC2372
- EPC2372
- EPC
-
3 000:
€ 2,43
-
Non-Stocked
-
New Product
|
Mouser Part No
65-EPC2372-ES
New Product
|
EPC
|
GaN FETs 25 V enhancement-mode eGaN power transistor for high-frequency DC-DC conversion and synchronous rectification.
|
|
Non-Stocked
|
|
Min.: 3 000
Mult.: 1
|
|
|
|
|
GaN FETs 18 V enhancement-mode eGaN power transistor, 88 A, 0.5 mOhm typ RDS(on), optimized for servers and AI power systems.
EPC EPC2373
- EPC2373
- EPC
-
1:
€ 4,61
-
Non-Stocked
-
New Product
|
Mouser Part No
65-EPC2373-ES
New Product
|
EPC
|
GaN FETs 18 V enhancement-mode eGaN power transistor, 88 A, 0.5 mOhm typ RDS(on), optimized for servers and AI power systems.
|
|
Non-Stocked
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
GaN FETs Enhancement-mode eGaN power transistor for high-efficiency DC-DC conversion and synchronous rectification.
EPC EPC2374
- EPC2374
- EPC
-
3 000:
€ 2,68
-
Non-Stocked
-
New Product
|
Mouser Part No
65-EPC2374-ES
New Product
|
EPC
|
GaN FETs Enhancement-mode eGaN power transistor for high-efficiency DC-DC conversion and synchronous rectification.
|
|
Non-Stocked
|
|
Min.: 3 000
Mult.: 1
|
|
|
|
|
GaN FETs Enhancement-mode eGaN power transistor for high-frequency power conversion applications.
EPC EPC2375
- EPC2375
- EPC
-
1:
€ 5,71
-
Non-Stocked
-
New Product
|
Mouser Part No
65-EPC2375
New Product
|
EPC
|
GaN FETs Enhancement-mode eGaN power transistor for high-frequency power conversion applications.
|
|
Non-Stocked
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
GaN FETs Enhancement-mode eGaN power transistor for high-current, high-frequency DC-DC conversion and synchronous rectification.
EPC EPC2376
- EPC2376
- EPC
-
3 000:
€ 4,60
-
Non-Stocked
-
New Product
|
Mouser Part No
65-EPC2376
New Product
|
EPC
|
GaN FETs Enhancement-mode eGaN power transistor for high-current, high-frequency DC-DC conversion and synchronous rectification.
|
|
Non-Stocked
|
|
Min.: 3 000
Mult.: 1
|
|
|
|
|
GaN FETs 40 V, 101 A enhancement-mode eGaN power transistor with 0.5 mOhm typ RDS(on), optimized for 48 V-to-12 V LLC converter synchronous rectification.
EPC EPC2377
- EPC2377
- EPC
-
1:
€ 5,81
-
Non-Stocked
-
New Product
|
Mouser Part No
65-EPC2377
New Product
|
EPC
|
GaN FETs 40 V, 101 A enhancement-mode eGaN power transistor with 0.5 mOhm typ RDS(on), optimized for 48 V-to-12 V LLC converter synchronous rectification.
|
|
Non-Stocked
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
GaN FETs 25 V, 101 A GaN power transistor with 0.41 mOhm typ RDS(on), optimized for high-performance DC-DC conversion and synchronous rectification.
EPC EPC2378
- EPC2378
- EPC
-
1:
€ 5,81
-
Non-Stocked
-
New Product
|
Mouser Part No
65-EPC2378
New Product
|
EPC
|
GaN FETs 25 V, 101 A GaN power transistor with 0.41 mOhm typ RDS(on), optimized for high-performance DC-DC conversion and synchronous rectification.
|
|
Non-Stocked
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
Efficient Power Conversion
EPC EPC7020
- EPC7020
- EPC
-
Non-Stocked
-
New Product
|
Mouser Part No
65-EPC7020
New Product
|
EPC
|
Efficient Power Conversion
|
|
Non-Stocked
|
|
|
|
|
