STMicroelectronics IGBTs

Ergebnisse: 205
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Menge RoHS ECAD Model Technologie
Verpackung/Gehäuse
Montageart
Konfiguration
Kollektor-Emitterspannung VCEO max.
Sättigungsspannung Kollektor-Emitter
Maximale Gate-Emitter-Spannung
Kollektorgleichstrom bei 25 C
Pd - Verlustleistung
Minimale Betriebstemperatur
Maximale Betriebstemperatur
Serie
Qualifikation
Verpackung
STMicroelectronics IGBTs Trench gate field-stop 650 V, 30 A high speed HB series IGBT
Datenblatt
90Auf Lager
600erwartet ab 24.08.2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.75 V - 20 V, 20 V 30 A 260 W - 55 C + 175 C STGW30H65FB Tube
STMicroelectronics IGBTs PowerMESH&#34 IGBT
Datenblatt
419Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 600 V 2.1 V - 20 V, 20 V 60 A 200 W - 55 C + 150 C STGW30NC60WD Tube
STMicroelectronics IGBTs N-CHANNEL MFT
Datenblatt
554Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 600 V 1.8 V - 20 V, 20 V 80 A 250 W - 55 C + 150 C STGW39NC60VD Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
Datenblatt
452Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGW40H120F2 Tube
STMicroelectronics IGBTs 600V 40A trench gate field-stop IGBT
Datenblatt
140Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 600 V 1.6 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGW40H60DLFB Tube
STMicroelectronics IGBTs 600V 40A trench gate field-stop IGBT
Datenblatt
1 138Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.8 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGW40H65DFB Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
Datenblatt
Produkt-Kommentare
414Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C M Tube
STMicroelectronics IGBTs 600V 60A Trench Gate 1.8V Vce IGBT
Datenblatt
258Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 600 V 2.35 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGW60V60F Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
Datenblatt
344Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
Datenblatt
Produkt-Kommentare
467Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 30 A 283 W - 55 C + 175 C M Tube
STMicroelectronics IGBTs 19A 600V Very Fast IGBT Ultrafast Diode
Datenblatt
936Auf Lager
3 000Auf Bestellung
Min.: 1
Mult.: 1

Si TO-247 Through Hole Single 600 V 1.8 V - 20 V, 20 V 52 A 208 W - 55 C + 150 C STGWA19NC60HD Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 30 A, high speed HB2 series IGBT in a TO-247 long
Datenblatt
406Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 50 A 167 W - 55 C + 175 C Tube
STMicroelectronics IGBTs Trench gate field-stop 1600 V, 30 A, soft-switching IH2 series IGBT
Datenblatt
3Auf Lager
600Auf Bestellung
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.6 kV 1.77 V 20 V 85 A 395 W - 55 C + 175 C Tube
STMicroelectronics IGBTs Trench gate field-stop 650 V, 40 A high speed HB series IGBT
Datenblatt
437Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGWA40H65DFB Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long
Datenblatt
497Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 72 A 227 W - 55 C + 175 C STGWA40HP65FB2 Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
Datenblatt
180Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C M Tube


STMicroelectronics IGBTs Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long
Datenblatt
598Auf Lager
Min.: 1
Mult.: 1

Si Through Hole Single 650 V 1.55 V - 20 V, 20 V 86 A 272 W - 55 C + 175 C Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 lo
Datenblatt
400Auf Lager
600erwartet ab 13.04.2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.5 V - 20 V, 20 V 100 A 300 W - 55 C + 175 C HB2 Tube
STMicroelectronics IGBTs Trench gate field-stop 650 V, 20 A high speed HB series IGBT
Datenblatt
470Auf Lager
Min.: 1
Mult.: 1

Si TO-3P Through Hole Single 650 V 1.55 V - 20 V, 20 V 40 A 168 W - 55 C + 175 C STGWT20H65FB Tube
STMicroelectronics IGBTs 1250V 20A trench gte field-stop IGBT
Datenblatt
613Auf Lager
Min.: 1
Mult.: 1

Si TO-3P Through Hole Single 1.25 kV 2.55 V - 20 V, 20 V 40 A 259 W - 55 C + 175 C STGWT20IH125DF Tube
STMicroelectronics IGBTs Trench gate field-stop 650 V, 40 A high-speed HB series IGBT
Datenblatt
848Auf Lager
Min.: 1
Mult.: 1

Si TO-3P-3 Through Hole Single 650 V 1.6 V - 30 V, 30 V 80 A 283 W - 55 C + 175 C STGWT40HP65FB Tube
STMicroelectronics IGBTs 650V 60A HSpd trench gate field-stop IGBT
Datenblatt
297Auf Lager
Min.: 1
Mult.: 1

Si TO-3P Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGWT60H65DFB Tube
STMicroelectronics IGBTs Trench gate H series 650V 80A HiSpd
Datenblatt
74Auf Lager
Min.: 1
Mult.: 1

Si TO-3P Through Hole Single 650 V 1.6 V - 20 V, 20 V 120 A 469 W - 55 C + 175 C STGWT80H65DFB Tube
STMicroelectronics IGBTs Trench gate field-stop 1200 V, 75 A, high-speed H series IGBT in a Max247 long l
Datenblatt
283Auf Lager
Min.: 1
Mult.: 1

Si MAX257-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 150 A 750 W - 55 C + 175 C Tube
STMicroelectronics IGBTs 600V 20A Hi Spd TrenchGate FieldStop
Datenblatt
292Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 600 V 1.8 V - 20 V, 20 V 40 A 167 W - 55 C + 175 C STGW20V60F Tube