MDMesh™ N-Channel Power MOSFETs

STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best RDS(on)*Qg in the industry.

Ergebnisse: 20
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Menge RoHS ECAD Model Technologie
Montageart
Verpackung/Gehäuse
Transistorpolung
Anzahl der Kanäle
Vds - Drain-Source-Durchschlagspannung
Id - Drain-Gleichstrom
Rds On - Drain-Source-Widerstand
Vgs - Gate-Source-Spannung
Vgs th - Gate-Source-Schwellspannung
Qg - Gate-Ladung
Minimale Betriebstemperatur
Maximale Betriebstemperatur
Pd - Verlustleistung
Kanalmodus
Handelsname
Verpackung
STMicroelectronics MOSFETs N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package
Datenblatt
6 550Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 3.5 A 1.4 Ohms - 25 V, 25 V 3 V 8.5 nC - 55 C + 150 C 45 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFETs N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package
Datenblatt
1 882Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 22 A 150 mOhms - 25 V, 25 V 3 V 36 nC - 55 C + 150 C 170 W Enhancement MDmesh Reel, Cut Tape, MouseReel

STMicroelectronics MOSFETs N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package
Datenblatt
1 848Auf Lager
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 22 A 135 mOhms - 25 V, 25 V 2 V 36 nC - 55 C + 150 C 170 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 800 V MDMesh
Datenblatt
921Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 17 A 295 mOhms - 30 V, 30 V 3 V 70 nC - 65 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 800 V 0.25 17A Mdmesh
Datenblatt
403Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 17 A 250 mOhms - 30 V, 30 V 3 V 70 nC - 55 C + 150 C 40 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 550 mOhm typ., 5.5 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6
Datenblatt
1 767Auf Lager
Min.: 1
Mult.: 1
: 3 000

Si SMD/SMT PowerFLAT-5x6-4 N-Channel 1 Channel 600 V 5.5 A 660 mOhms - 25 V, 25 V 3.25 V 8.8 nC - 55 C + 150 C 48 W Enhancement MDmesh Reel, Cut Tape
STMicroelectronics MOSFETs N-channel 600 V, 0.115 Ohm typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8
Datenblatt
1 617Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 3 000

Si SMD/SMT PowerFLAT-8x8-5 N-Channel 1 Channel 600 V 21.5 A 135 mOhms - 25 V, 25 V 3 V 47 nC - 55 C + 150 C 150 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFETs N-channel 600 V, 330 mOhm typ., 7 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV
Datenblatt
2 794Auf Lager
Min.: 1
Mult.: 1
: 3 000

Si SMD/SMT PowerFLAT-5x6-4 N-Channel 1 Channel 600 V 7 A 415 mOhms - 25 V, 25 V 3.25 V 13 nC - 55 C + 150 C 52 W Enhancement MDmesh Reel, Cut Tape
STMicroelectronics MOSFETs N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in D2PAK package
Datenblatt
1 387Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 26 A 125 mOhms - 25 V, 25 V 3 V 45.5 nC - 55 C + 150 C 190 W Enhancement MDmesh Reel, Cut Tape, MouseReel

STMicroelectronics MOSFETs N-channel 800 V MDMesh
Datenblatt
676Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 17 A 295 mOhms - 30 V, 30 V 3 V 70 nC - 65 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 800 V MDMesh
Datenblatt
488Auf Lager
1 000erwartet ab 28.12.2026
MouseReel verfügbar
Min.: 1
Mult.: 1
: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 800 V 17 A 295 mOhms - 30 V, 30 V 5 V 70 nC - 55 C + 150 C 190 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFETs N-Ch, 800V-0.95ohms Mdmesh 6.5A
Datenblatt
708Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 6.5 A 1.05 Ohms - 30 V, 30 V 4 V 18 nC - 55 C + 150 C 90 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFETs N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in TO-3PF package
Datenblatt
87Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 650 V 30 A 95 mOhms - 25 V, 25 V 4 V 71 nC - 55 C + 150 C 57 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 0.76 Ohm typ., 4.8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6
Datenblatt
209Auf Lager
3 000erwartet ab 25.05.2026
MouseReel verfügbar
Min.: 1
Mult.: 1
: 3 000

Si SMD/SMT PowerFLAT-5x6-8 N-Channel 1 Channel 600 V 4.8 A 860 mOhms - 25 V, 25 V 3 V 10 nC - 55 C + 150 C 48 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFETs N-channel 600 V 0.27 ohm 13A MDmesh
Datenblatt
913Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 13 A 260 mOhms - 25 V, 25 V 2 V 35 nC - 55 C + 150 C 110 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Ch 800 V 0.76 Ohm 6 A Zener-protected
Datenblatt
400Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 6 A 950 mOhms - 30 V, 30 V 4 V 16.5 nC - 55 C + 150 C 110 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in D2PAK package
Datenblatt
970erwartet ab 23.04.2026
MouseReel verfügbar
Min.: 1
Mult.: 1
: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 34 A 88 mOhms - 25 V, 25 V 3 V 57 nC - 55 C + 150 C 250 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFETs N-Ch 800V 0.76 Ohm 6 A MDmesh K5
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 16 Wochen
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 950 mOhms - 30 V, 30 V 4 V 16.5 nC - 55 C + 150 C 110 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N-CH 800V IPAK DPAK Mdmesh PWR MOSFET
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 16 Wochen
Min.: 1 000
Mult.: 1 000

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6.5 A 1.05 Ohms - 30 V, 30 V 4 V 18 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in I2PAK package
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 16 Wochen
Min.: 1 000
Mult.: 1 000
Si Through Hole TO-262-3 N-Channel 1 Channel 600 V 26 A 125 mOhms - 25 V, 25 V 3 V 45.5 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube