SI02C120SMA

SI02C120SMA Silicon Carbide (SiC) Schottky Diode

Diotec Semiconductor SI02C120SMA Silicon Carbide (SiC) Schottky Diode offers a repetitive peak reverse voltage rating of 1200V and a forward current capability of 2A. This diode features a low capacitive charge, extremely fast switching, forward voltage of approximately 1.4V. The SI02C120SMA Schottky diode exhibits very low leakage current up to 2μA and low junction capacitance up to 112pF. This diode is housed in a compact DO‑214AC (SMA) surface-mount package. The SI02C120SMA Schottky diode operates over a wide junction temperature range from -55°C to +175°C, making it reliable in harsh environmental conditions and demanding power applications. Typical applications include rectification of high frequencies, high-efficient switching stages, power factor correction diodes, free-wheeling diodes for inverters, and commercial/industrial grade.