Schottky Dioden & Gleichrichter Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
YQ10RSM10SDTFTL1
ROHM Semiconductor
1:
€ 1,58
7 578 Auf Lager
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755-YQ10RSM10SDTFTL1
ROHM Semiconductor
Schottky Dioden & Gleichrichter Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
7 578 Auf Lager
1
€ 1,58
10
€ 1,11
100
€ 0,777
500
€ 0,617
1 000
Anzeigen
4 000
€ 0,549
1 000
€ 0,576
2 000
€ 0,556
4 000
€ 0,549
Kaufen
Min.: 1
Mult.: 1
Details
Schottky Diodes
SMD/SMT
TO-277A-3
Dual Anode Common Cathode
Si
10 A
100 V
610 mV
200 A
80 uA
+ 175 C
Reel, Cut Tape
Schottky Dioden & Gleichrichter Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
YQ20NL10CDFHTL
ROHM Semiconductor
1:
€ 2,24
1 900 Auf Lager
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755-YQ20NL10CDFHTL
ROHM Semiconductor
Schottky Dioden & Gleichrichter Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
1 900 Auf Lager
1
€ 2,24
10
€ 1,55
100
€ 1,09
500
€ 1,06
1 000
€ 0,929
2 000
€ 0,894
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Min.: 1
Mult.: 1
Details
Schottky Diodes
SMD/SMT
TO-263L-3
Dual Anode Common Cathode
Si
20 A
100 V
650 mV
150 A
70 uA
+ 150 C
Reel, Cut Tape, MouseReel
Schottky Dioden & Gleichrichter Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
YQ20NL10SEFHTL
ROHM Semiconductor
1:
€ 2,18
2 000 Auf Lager
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755-YQ20NL10SEFHTL
ROHM Semiconductor
Schottky Dioden & Gleichrichter Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
2 000 Auf Lager
1
€ 2,18
10
€ 1,35
100
€ 0,946
500
€ 0,877
1 000
€ 0,745
Kaufen
Min.: 1
Mult.: 1
Details
Schottky Diodes
SMD/SMT
TO-263L-3
Single
Si
20 A
100 V
790 mV
200 A
80 uA
+ 150 C
Reel, Cut Tape
Schottky Dioden & Gleichrichter Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
YQ20BM10SDFHTL
ROHM Semiconductor
1:
€ 1,38
400 Auf Lager
2 500 erwartet ab 07.05.2026
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755-YQ20BM10SDFHTL
ROHM Semiconductor
Schottky Dioden & Gleichrichter Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
400 Auf Lager
2 500 erwartet ab 07.05.2026
1
€ 1,38
10
€ 0,972
100
€ 0,773
500
€ 0,638
2 500
€ 0,494
5 000
Anzeigen
1 000
€ 0,558
5 000
€ 0,488
10 000
€ 0,484
Kaufen
Min.: 1
Mult.: 1
Details
Schottky Diodes
SMD/SMT
TO-252-3
Single
Si
20 A
100 V
790 mV
150 A
80 uA
+ 150 C
Reel, Cut Tape
Schottky Dioden & Gleichrichter Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
YQ30NL10SEFHTL
ROHM Semiconductor
1:
€ 2,68
1 280 Auf Lager
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755-YQ30NL10SEFHTL
ROHM Semiconductor
Schottky Dioden & Gleichrichter Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
1 280 Auf Lager
1
€ 2,68
10
€ 1,51
100
€ 1,07
500
€ 1,02
1 000
€ 0,963
2 000
€ 0,866
Kaufen
Min.: 1
Mult.: 1
Details
Schottky Diodes
SMD/SMT
TO-263L-3
Single
Si
30 A
100 V
780 mV
200 A
150 uA
+ 150 C
Reel, Cut Tape