Zener-Protected SuperMESH3 Power MOSFETs

STMicroelectronics Zener-Protected SuperMESH3™ Power MOSFETs are created through increased fine-tuning of STMicroelectronic's strip-based PowerMESH™ layout, combined with optimization of the vertical structure. In addition to significantly reducing ON-resistance, special attention has been taken to ensure these MOSFETs offer dynamic performance with a large avalanche capability. STMicroelectronics Zener-Protected SuperMESH3 Power MOSFETs are offered in voltages up to 1200V. Applications include switch-mode low-power supplies (SMPS), DC-DC converters, switching, and offline power supplies.

Ergebnisse: 40
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Menge RoHS ECAD Model Technologie
Montageart
Verpackung/Gehäuse
Transistorpolung
Anzahl der Kanäle
Vds - Drain-Source-Durchschlagspannung
Id - Drain-Gleichstrom
Rds On - Drain-Source-Widerstand
Vgs - Gate-Source-Spannung
Vgs th - Gate-Source-Schwellspannung
Qg - Gate-Ladung
Minimale Betriebstemperatur
Maximale Betriebstemperatur
Pd - Verlustleistung
Kanalmodus
Handelsname
Verpackung
STMicroelectronics MOSFETs N-Ch 1000 Volt 3.5A Zener SuperMESH
Datenblatt
64Auf Lager
3 000erwartet ab 24.07.2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 3.5 A 3.7 Ohms - 30 V, 30 V 3 V 42 nC - 55 C + 150 C 125 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220FP package
Datenblatt
334Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 12 A 320 mOhms - 25 V, 25 V 4 V 19 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 620V 1.1
Datenblatt
289Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 620 V 5.5 A 1.28 Ohms - 30 V, 30 V 3 V 34 nC - 55 C + 150 C 90 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N-Ch 525V 2.1 Ohm 2.5A SuperMESH 3
Datenblatt
414Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 525 V 2.5 A 2.6 Ohms - 30 V, 30 V 3 V 11 nC - 55 C + 150 C 45 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Ch 620V 1.8 ohm 3.8 A SuperMESH3
Datenblatt
26Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 620 V 3.8 A 1.95 Ohms - 30 V, 30 V 4.5 V 14 nC - 55 C + 150 C 70 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFETs N-Ch 650V 1.1 Ohm 5.4A SuperMESH3
Datenblatt
695Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 5.4 A 1.3 Ohms - 30 V, 30 V 3 V 35 nC - 55 C + 150 C 30 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N-Ch 620V 1.28 Ohm 4.2A SuperMESH 3
Datenblatt
74Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 620 V 4.2 A 1.6 Ohms - 30 V, 30 V 3 V 26 nC - 55 C + 150 C 70 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Ch 525V 1.2 ohm 4.4 A SuperMESH3
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 16 Wochen
MouseReel verfügbar
Min.: 1
Mult.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 525 V 3.8 A 2.6 Ohms - 30 V, 30 V 4.5 V 11 nC - 55 C + 150 C 45 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFETs N-Ch 950V 3 Ohm 4A Zener SuperMESH3
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 16 Wochen
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 950 V 4 A 3 Ohms - 30 V, 30 V 3 V 19 nC - 55 C + 150 C 25 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N-CHANNEL 950 V 1.1 7.2 A TO-220
Datenblatt
Vorlaufzeit 16 Wochen
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 950 V 7.2 A 1.35 Ohms - 30 V, 30 V 3 V 34 nC - 55 C + 150 C 35 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N-Ch 450V 3.2 Ohm 1.8A SuperMESH 3
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 16 Wochen
Min.: 3 000
Mult.: 3 000

Si Through Hole TO-251-3 N-Channel 1 Channel 450 V 1.8 A 3.8 Ohms - 30 V, 30 V 3 V 6 nC - 55 C + 150 C 27 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs POWER MOSFET N-CH 950V 4 A
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 16 Wochen
Min.: 3 000
Mult.: 3 000

Si Through Hole TO-251-3 N-Channel 1 Channel 950 V 4 A 3 Ohms - 30 V, 30 V 3 V 19 nC - 55 C + 150 C 90 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N-Channel 620V 1.1 Ohms 5.5A
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 16 Wochen
Min.: 2 500
Mult.: 2 500
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 5.5 A 1.28 Ohms - 30 V, 30 V 3 V 34 nC - 55 C + 150 C 90 W Enhancement MDmesh Reel
STMicroelectronics MOSFETs N-Channel 400V to 650V
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 16 Wochen
Min.: 1 000
Mult.: 1 000

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 10 A 750 mOhms - 30 V, 30 V 3 V 42 nC - 55 C + 150 C 35 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N-Ch 620V 3 Ohm 2.2A SuperMESH
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 16 Wochen
Min.: 3 000
Mult.: 3 000

Si Through Hole TO-251-3 N-Channel 1 Channel 620 V 2.2 A 3.6 Ohms - 30 V, 30 V 4.5 V 15 nC - 55 C + 150 C 45 W Enhancement MDmesh Tube